Acceptor in Quantum Dot in Cubic Semiconductors

Energy levels and oscillator strengths for transitions between the lowest states of an acceptor in a quantum dot of finite potential barrier in cubic semiconductors have been computed in the effective-mass approximation. The degeneracy of the valence band in cubic semiconductors was taken into account in the spherical approximation. Variational envelope functions consisted of a finite basis of exponentials, and had to satisfy appropriate boundary conditions to ensure the hermiticity of the Hamiltonian matrix. In typical cubic semiconductors we have found enhanced values, by an order of magnitude, of oscillator strengths for the acceptor optical transitions in the dots of radii comparable to the acceptor diameter.